symbol max p-channel units v ds v v gs v i dm t j , t stg c symbol typ max 40 50 67 80 r jl 33 40 symbol typ max 38 50 66 80 r jl 30 40 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja maximum junction-to-ambient a steady-state maximum junction-to-ambient a steady-state c/w maximum junction-to-lead c steady-state c/w thermal characteristics: p-channel c/w c/w units c/w junction and storage temperature range -55 to 150 -55 to 150 thermal characteristics: n-channel parameter maximum junction-to-ambient a t 10s r ja t a =70c power dissipation t a =25c p d 30 -30 20 drain-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 7.5 6 30 2.5 1.6 -5.3 -6.6 2.5 1.6 -30 20 gate-source voltage a continuous drain current a t a =25c i d t a =70c pulsed drain current b AOP600 features n-channel p-channel v ds (v) = 30v -30v i d = 7.5a (v gs = 10v) -6.6a r ds(on) < 28m ? < 35m ? (v gs = - 10v) < 43m ? < 58m ? (v gs = - 4.5v) the AOP600 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter, suitable for a multitude of applications. standard product AOP600 is pb-free (meets rohs & sony 259 specifications). AOP600l is a green product ordering option. AOP600 and AOP600l are electrically identical. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 pdip-8 g2 d2 s2 g1 d1 s1 n-channel p-channel complementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 7
AOP600 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 30 a 22.6 28 t j =125c 33 43 m ? g fs 12 16 s v sd 0.76 1 v i s 4a c iss 680 820 pf c oss 102 pf c rss 77 pf r g 3 3.6 ? q g (10v) 13.84 16.6 nc q g 6.74 8.1 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 16.5 20 ns q rr 7.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time total gate charge v gs =4.5v, v ds =15v, i d =7.5a i f =7.5a, di/dt=100a/ s i f =7.5a, di/dt=100a/ s turn-off delaytime turn-off fall time turn-on delaytime v gs =10v, v ds =15v, r l =2.0 ? , r gen =6 ? gate resistance v gs =0v, v ds =0v, f=1mhz body diode forward voltage i s =1a, v gs =0v v gs =0v, v ds =15v, f=1mhz reverse transfer capacitance input capacitance output capacitance. switching parameters total gate charge gate source charge gate drain charge turn-on rise time maximum body-diodecontinuous current dynamic parameters m ? v gs =4.5v, i d =6.0a r ds(on) static drain-source on-resistance v gs =10v, i d =7.5a forward transconductance v ds =5v, i d =7.5a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =10v, v ds =5v a gate-body leakage current v ds =0v, v gs =20v n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : sept 2005 www.freescale.net.cn 2 / 7
AOP600 typical electrical and thermal characteristics: n-channel 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 70 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =7.5a 125c 25c 25c i d =7.5a 5v 6v www.freescale.net.cn 3 / 7
AOP600 typical electrical and thermal characteristics: n-channe l 0 2 4 6 8 10 02468101214 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rs s 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1 s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =7.5a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v 10 s www.freescale.net.cn 4 / 7
AOP600 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -1.2 -2 -2.4 v i d(on) 30 a 28 35 t j =125c 37 45 44 58 m ? g fs 13 s v sd -0.76 -1 v i s -4.2 a c iss 920 1100 pf c oss 190 pf c rss 122 pf r g 3.6 4.4 ? q g (10v) 18.5 22.2 nc q g (4.5v) 9.6 11.6 nc q gs 2.7 nc q gd 4.5 nc t d(on) 7.7 ns t r 5.7 ns t d(off) 20.2 ns t f 9.5 ns t rr 20 24 ns q rr 8.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. rev 4 : sept 2005 p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v m ? v gs =-4.5v, i d =-5a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v v ds =-5v, i d =-6.6a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-6.6a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-15v, i d =-6.6a turn-on delaytime v gs =-10v, v ds =-15v, r l =2.3 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-6.6a, di/dt=100a/ s body diode reverse recovery charge i f =-6.6a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any en application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 5 / 7
AOP600 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 20 25 30 35 40 45 50 55 60 65 70 345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-6.6a 25c 125c i d =-6.6a -4.5v -5v www.freescale.net.cn 6 / 7
AOP600 typical electrical and thermal characteristic s 0 2 4 6 8 10 048121620 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rs s 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j ( max ) =150c, t a =25c v ds =-15v i d =-6.6a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =50c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 7 / 7
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